Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

RS Stock No.:: 165-3003
Mfr. Part No.:: SI4900DY-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

This image is representative of the product range

On back order for despatch 02/10/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 2500)

$0.809

(exc. GST)

$0.89

(inc. GST)

Units	Per unit	Per Reel*
2500 - 10000	$0.809	$2,022.50
12500 +	$0.728	$1,820.00

*price indicative

RS Stock No.:: 165-3003
Mfr. Part No.:: SI4900DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: TW

Product Details

Dual N-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	58 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	4mm
Transistor Material	Si
Length	5mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C