Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF
- RS Stock No.:
- 708-5134
- Distrelec Article No.:
- 304-44-152
- Mfr. Part No.:
- IRF510PBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
$13.85
(exc. GST)
$15.24
(inc. GST)
FREE delivery for orders over $80.00 ex GST
In Stock
- 1,180 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | $1.385 | $13.85 |
| 20 - 20 | $1.384 | $13.84 |
| 30 + | $1.348 | $13.48 |
*price indicative
- RS Stock No.:
- 708-5134
- Distrelec Article No.:
- 304-44-152
- Mfr. Part No.:
- IRF510PBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220AB | |
| Series | IRF510 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220AB | ||
Series IRF510 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Height 9.01mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 43W Maximum Power Dissipation - IRF510PBF
This power MOSFET is a single N-channel enhancement device designed for switching and amplification tasks in through‑hole assemblies. It operates across a wide temperature span suitable for demanding environments and accepts standard gate‑drive levels to control medium‑power loads. The component is supplied in a TO‑220AB package for straightforward mounting and thermal interfacing on heatsinks.
Features and Benefits:
• 100V drain voltage supports high‑voltage switching applications
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
Applications
• Suitable for amplifier circuit output stages in audio designs
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
What ambient temperatures can the device withstand in operation?
It is specified to function from -55°C up to 175°C junction temperature for use in high‑temperature assemblies.
How many pins does the component present for PCB mounting?
The device is provided with three pins configured for through‑hole mounting in a TO‑220AB footprint.
What package form factor should I prepare a heatsink for?
The TO‑220AB enclosure offers a flat rear tab suitable for bolting to a heatsink to improve thermal dissipation.
Is the component suitable for automotive‑standard requirements?
The device is not specified to meet automotive approval standards and should not be assumed compliant for regulated vehicle use.
Related links
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF510SPBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF540PBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF530PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220