N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF
- RS Stock No.:
- 688-6923
- Mfr. Part No.:
- IRFB3607PBF
- Brand:
- Infineon
55 In AU stock for next working day delivery
100 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$1.794
(exc. GST)
$1.973
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | $1.794 | $8.97 |
| 15 + | $1.762 | $8.81 |
*price indicative
- RS Stock No.:
- 688-6923
- Mfr. Part No.:
- IRFB3607PBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 75 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 4.82mm |
| Length | 10.66mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.02mm |
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