N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK Infineon IRLU024NPBF

RS Stock No.:: 543-0591
Mfr. Part No.:: IRLU024NPBF
Brand:: Infineon

N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK Infineon IRLU024NPBF

12 In AU stock for next working day delivery

293 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

Was $1.31

You pay

$1.21

(exc. GST)

$1.33

(inc. GST)

Units	Per unit
1 - 18	$1.21
19 - 37	$1.19
38 +	$1.17

RS Stock No.:: 543-0591
Mfr. Part No.:: IRLU024NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	55 V
Package Type	IPAK (TO-251)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	15 nC @ 5 V
Length	6.73mm
Number of Elements per Chip	1
Transistor Material	Si
Width	2.39mm
Height	6.22mm
Minimum Operating Temperature	-55 °C