N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF

RS Stock No.:: 541-1613
Mfr. Part No.:: IRFU120NPBF
Brand:: Infineon

N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF

This image is representative of the product range

172 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$1.43

(exc. GST)

$1.57

(inc. GST)

Units	Per unit
1 - 18	$1.43
19 - 37	$1.41
38 +	$1.38

RS Stock No.:: 541-1613
Mfr. Part No.:: IRFU120NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRFU120N is the 100V single N-channel power MOSFET in a I-Pak package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Surface Mount
Straight Lead
Fast switching
Lead free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.4 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	210 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.6mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	2.3mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	25 nC @ 10 V
Height	6.1mm
Minimum Operating Temperature	-55 °C