N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB Infineon IRF3710PBF

RS Stock No.:: 540-9812
Mfr. Part No.:: IRF3710PBF
Brand:: Infineon

N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB Infineon IRF3710PBF

210 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$3.00

(exc. GST)

$3.30

(inc. GST)

Units	Per unit
1 - 12	$3.00
13 - 24	$2.96
25 +	$2.90

RS Stock No.:: 540-9812
Mfr. Part No.:: IRF3710PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: PH

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	57 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	130 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	4.69mm
Minimum Operating Temperature	-55 °C
Height	8.77mm