Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

$1,120.80

(exc. GST)

$1,232.80

(inc. GST)

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Per Reel*
800 - 3200$1.401$1,120.80
4000 +$1.261$1,008.80

*price indicative

RS Stock No.:
218-3095
Mfr. Part No.:
IRF3710STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

86.7nC

Maximum Power Dissipation Pd

3.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

EIA 418

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Lead-Free

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