Vishay IRFZ48R Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS Stock No.:
- 281-6035
- Distrelec Article No.:
- 171-17-666
- Mfr. Part No.:
- IRFZ48RPBF
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 1000 units)*
$2,087.00
(exc. GST)
$2,296.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 1000 - 1000 | $2.087 | $2,087.00 |
| 2000 - 4000 | $1.931 | $1,931.00 |
| 5000 + | $1.795 | $1,795.00 |
*price indicative
- RS Stock No.:
- 281-6035
- Distrelec Article No.:
- 171-17-666
- Mfr. Part No.:
- IRFZ48RPBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | IRFZ48R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 190W | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series IRFZ48R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 190W | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET utilizes advanced processing techniques to achieve low on-resistance per silicon area. It is an efficient and reliable device for various applications due to their fast switching speed and ruggedized design.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
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