Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223

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Subtotal (1 pack of 10 units)*

$9.23

(exc. GST)

$10.15

(inc. GST)

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  • 2,990 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40$0.923$9.23
50 - 90$0.782$7.82
100 - 240$0.727$7.27
250 - 990$0.712$7.12
1000 +$0.699$6.99

*price indicative

RS Stock No.:
273-3016
Mfr. Part No.:
IPN60R1K5PFD7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

650V

Series

IPN

Package Type

PG-SOT223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.6nC

Maximum Power Dissipation Pd

6W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

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