Infineon IPN Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1

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$40.05

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$44.05

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Units
Per unit
Per Pack*
50 - 700$0.801$40.05
750 - 1450$0.781$39.05
1500 +$0.769$38.45

*price indicative

Packaging Options:
RS Stock No.:
217-2546
Mfr. Part No.:
IPN70R1K4P7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.2W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.8mm

Standards/Approvals

No

Width

3.7 mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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