Dual SiC N-Channel MOSFET, 195 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB015N06NF2SATMA1
- RS Stock No.:
- 262-5852
- Mfr. Part No.:
- IPB015N06NF2SATMA1
- Brand:
- Infineon
800 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 2)
$4.075
(exc. GST)
$4.483
(inc. GST)
| Units | Per unit | Per Pack* |
| 2 - 8 | $4.075 | $8.15 |
| 10 - 48 | $3.505 | $7.01 |
| 50 - 98 | $2.75 | $5.50 |
| 100 - 248 | $2.205 | $4.41 |
| 250 + | $2.165 | $4.33 |
| *price indicative | ||
- RS Stock No.:
- 262-5852
- Mfr. Part No.:
- IPB015N06NF2SATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PG-TO263-3 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Transistor Material | SiC |
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