Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

$14.19

(exc. GST)

$15.608

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 798 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8$7.095$14.19
10 - 48$6.115$12.23
50 - 98$4.795$9.59
100 - 248$3.855$7.71
250 +$3.78$7.56

*price indicative

Packaging Options:
RS Stock No.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

Related links