Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
- RS Stock No.:
- 262-5858
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (On a Reel of 800)
$1.393
(exc. GST)
$1.532
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | $1.393 | $1,114.40 |
*price indicative
- RS Stock No.:
- 262-5858
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PG-TO263-3 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Transistor Material | SiC |
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