Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP IPDQ60R065S7XTMA1
- RS Stock No.:
- 260-1204
- Mfr. Part No.:
- IPDQ60R065S7XTMA1
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 1 - 9 | $7.81 |
| 10 - 99 | $7.03 |
| 100 - 249 | $6.33 |
| 250 - 499 | $5.70 |
| 500 + | $5.13 |
*price indicative
- RS Stock No.:
- 260-1204
- Mfr. Part No.:
- IPDQ60R065S7XTMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 195W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Length | 15.5mm | |
| Width | 15.1 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 195W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Length 15.5mm | ||
Width 15.1 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
Related links
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