Infineon IPD Type N-Channel MOSFET, 20 A, 600 V N, 10-Pin HDSOP IPDD60R125G7XTMA1

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1 - 9$3.19
10 - 99$2.85
100 - 249$2.39
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500 +$2.04

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Packaging Options:
RS Stock No.:
258-3875
Mfr. Part No.:
IPDD60R125G7XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

HDSOP

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Double DPAK, the first top-side cooled surface mount device package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS G7 super junction MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

Enables higher power density solutions

Exceeding the highest quality standards

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