Infineon IQE N-Channel MOSFET, 310 A, 25 V Enhancement, 24-Pin TSDSO IQE006NE2LM5CGSCATMA1
- RS Stock No.:
- 260-1073
- Mfr. Part No.:
- IQE006NE2LM5CGSCATMA1
- Brand:
- Infineon
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| 2 - 8 | $6.225 | $12.45 |
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*price indicative
- RS Stock No.:
- 260-1073
- Mfr. Part No.:
- IQE006NE2LM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | IQE | |
| Package Type | TSDSO | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series IQE | ||
Package Type TSDSO | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IQE Series MOSFET, 25V Maximum Drain-Source Voltage, 310A Maximum Continuous Drain Current - IQE006NE2LM5CGSCATMA1
This MOSFET is a surface-mount N‑channel enhancement transistor designed for power switching in demanding environments. It operates across a wide temperature span and is suited to applications requiring high continuous current and low conduction losses while conforming to RoHS limits. The device uses a 24‑pin TSDSO package and is intended for Compact board‑level integration.
Features and Benefits:
• 0.75mΩ Rds(on) lowers conduction losses during high‑current operation
• 1V forward voltage reduces power dissipation in conduction paths
• 310A continuous drain current supports heavy‑load switching demands
• -55°C to 150°C operating range enables use in extreme temperatures
• 24‑pin surface mount eases high‑density PCB assembly
• 1V forward voltage reduces power dissipation in conduction paths
• 310A continuous drain current supports heavy‑load switching demands
• -55°C to 150°C operating range enables use in extreme temperatures
• 24‑pin surface mount eases high‑density PCB assembly
Applications
• Suitable for high‑current DC‑DC converter stages
• Ideal for power distribution in industrial electronics
• Used with motor‑drive power stages requiring low loss
• Can be used for solid‑state power switching modules
• Suitable for compact, high‑power surface‑mount designs
• Ideal for power distribution in industrial electronics
• Used with motor‑drive power stages requiring low loss
• Can be used for solid‑state power switching modules
• Suitable for compact, high‑power surface‑mount designs
What package does it use for PCB mounting?
It is supplied in a TSDSO package configured for surface‑mount assembly.
How does the channel type affect switching behaviour?
The N‑channel enhancement mode provides low on‑resistance and efficient conduction when driven into enhancement.
What environmental limits define its usable temperature?
It is rated to operate from -55°C up to +150°C for wide‑range thermal conditions.
Which regulatory restriction is observed for materials?
The component is RoHS‑compliant, restricting certain hazardous substances.
What drain‑source voltage should not be exceeded?
The maximum allowable drain‑source voltage is 25V.
Related links
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 24-Pin TSDSO
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 8-Pin WHSON
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 8-Pin WHSON IQE006NE2LM5SCATMA1
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