Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$6.51

(exc. GST)

$7.16

(inc. GST)

Add to Basket
Select or type quantity
Orders below $60.00 (exc. GST) cost $12.95.
In Stock
  • 830 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9$6.51
10 - 99$5.74
100 - 249$4.81
250 - 499$4.73
500 +$4.10

*price indicative

Packaging Options:
RS Stock No.:
258-3796
Mfr. Part No.:
IPB100N12S305ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

139nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

Related links