Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263

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Subtotal (1 reel of 1000 units)*

$4,046.00

(exc. GST)

$4,451.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 1000$4.046$4,046.00
2000 - 2000$3.642$3,642.00
3000 +$3.277$3,277.00

*price indicative

RS Stock No.:
258-3795
Mfr. Part No.:
IPB100N12S305ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

139nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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