Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263
- RS Stock No.:
- 258-3802
- Mfr. Part No.:
- IPB180N10S403ATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
$4,157.00
(exc. GST)
$4,573.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | $4.157 | $4,157.00 |
| 2000 - 2000 | $3.741 | $3,741.00 |
| 3000 + | $3.367 | $3,367.00 |
*price indicative
- RS Stock No.:
- 258-3802
- Mfr. Part No.:
- IPB180N10S403ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
Related links
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement TO-263 IPB180N10S403ATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 120 V Enhancement TO-263