- RS Stock No.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (In a Tube of 30)
$16.80
(exc. GST)
$18.48
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | $16.80 | $504.00 |
60 - 60 | $15.12 | $453.60 |
90 + | $13.608 | $408.24 |
*price indicative
- RS Stock No.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon CoolSiC 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Highest efficiency
Reduced cooling effort
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Highest efficiency
Reduced cooling effort
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Drain Source Voltage | 1200 V |
Package Type | PG-TO247-4 |
Mounting Type | Surface Mount |
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