Infineon IMBG Type N-Channel MOSFET, 18 A, 1200 V N, 7-Pin TO-263 IMBG120R140M1HXTMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$8.53

(exc. GST)

$9.38

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 946 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9$8.53
10 - 99$7.67
100 - 249$6.91
250 - 499$6.22
500 +$5.60

*price indicative

Packaging Options:
RS Stock No.:
249-6952
Mfr. Part No.:
IMBG120R140M1HXTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1200V

Series

IMBG

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.

Very low switching losses

Short circuit withstand time 3 μs

Fully controllable dV/dt

Benchmark gate threshold voltage, VGS(th) = 4.5V

Robust against parasitic turn on, 0V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

Package creepage and clearance distance > 6.1mm

Sense pin for optimized switching performance

Related links