Infineon Type N-Channel MOSFET, 1200 V N TO-247 IMZ120R060M1HXKSA1

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$14.86

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2 - 4$12.43
5 - 9$10.49
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Packaging Options:
RS Stock No.:
258-3764
Mfr. Part No.:
IMZ120R060M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

N

Forward Voltage Vf

5.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

Highest efficiency

Reduced cooling effort

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