Vishay Type N-Channel MOSFET, 4.8 A, 200 V, 3-Pin TO-252 IRFR220PBF

This power MOSFET is a surface-mount, N-channel switching device designed for high-voltage power-control tasks in industrial and electronic systems. It operates across a broad temperature range and is intended for applications requiring moderate continuous current handling and elevated drain-source voltage tolerance. The component is supplied in a Compact TO-252 package suitable for automated PCB assembly.

• 200V maximum drain-source voltage provides high-voltage switching capability • 4.8A continuous drain current supports moderate load currents • 0.8Ω drain-source resistance reduces conduction losses under load • 42W maximum power dissipation allows sustained power handling • 14nC typical gate charge enables Faster gate-drive switching • ±150°C maximum operating temperature rating extends thermal margin

• Suitable for industrial motor-control driver stages • Ideal for high-voltage DC-DC converter switches • Used for power switching in automation actuators • Can be used for load switching in electrical test equipment

Keep gate-source voltage within ±20V and design gate drivers to charge the gate with approximately 14nC to meet switching-speed expectations while avoiding overstress.

With a 42W dissipation limit, use adequate copper area, thermal vias and heat-sinking strategies on the board to spread heat from the TO-252 tab and maintain device junction temperature within rated limits.

The device is rated from -55°C to +150°C for operation, so component selection and system thermal design must ensure junction and ambient temperatures remain inside this range.

The surface-mount TO-252 format needs correct solder fillet formation and reflow profiles to secure mechanical attachment and ensure low thermal resistance to the PCB.