Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF
- RS Stock No.:
- 256-7274
- Mfr. Part No.:
- IRF630PBF
- Brand:
- Vishay
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$48.65
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$53.50
(inc. GST)
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- 950 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | $0.973 | $48.65 |
| 100 - 450 | $0.857 | $42.85 |
| 500 - 4950 | $0.69 | $34.50 |
| 5000 + | $0.605 | $30.25 |
*price indicative
- RS Stock No.:
- 256-7274
- Mfr. Part No.:
- IRF630PBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Series | IRF630 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Series IRF630 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 4.65mm | ||
Automotive Standard No | ||
Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF
This power MOSFET is a semiconductor switch designed for high-voltage power applications, providing controlled conduction in N-channel configurations for through‑hole mounting. It is intended for circuits requiring robust voltage blocking and switching capability across a wide ambient temperature span.
Features and Benefits:
• 200V drain‑source rating enables high‑voltage switching
• 5.9A continuous drain current supports moderate load currents
• 0.4Ω Rds(on) reduces conduction losses during switching
• 74W power dissipation allows substantial thermal handling
• 43nC typical gate charge yields predictable switching behaviour
• 10V gate limit ensures compatibility with common gate drive levels
• 5.9A continuous drain current supports moderate load currents
• 0.4Ω Rds(on) reduces conduction losses during switching
• 74W power dissipation allows substantial thermal handling
• 43nC typical gate charge yields predictable switching behaviour
• 10V gate limit ensures compatibility with common gate drive levels
Applications
• Suitable for power switching in offline converters
• Ideal for amplifier output stage switching duties
• Used with motor‑control drivers in compact assemblies
• Can be used for replacement transistor tasks in TO‑220 designs
• Suitable for industrial power supplies with through‑hole assembly
• Ideal for amplifier output stage switching duties
• Used with motor‑control drivers in compact assemblies
• Can be used for replacement transistor tasks in TO‑220 designs
• Suitable for industrial power supplies with through‑hole assembly
What thermal range can it withstand during operation?
It operates reliably from -55°C to +150°C, accommodating harsh thermal environments.
How is the device mounted on a PCB or heatsink?
The component uses a TO‑220AB package with three through‑hole pins for soldered board retention and heatsink attachment via the tab.
What is the channel polarity and typical forward voltage?
The device employs an N‑type channel and exhibits a forward voltage of approximately 2V under conduction conditions.
Is it suitable for automotive qualification?
It is not certified to automotive standards but may be used in non‑automotive electronics that do not require those approvals.
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