Vishay Type N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-247 IRFPG30PBF

This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole installation in industrial and power-conversion contexts. It copes with demanding thermal environments and is intended for circuits requiring substantial voltage endurance and moderate continuous current, where a through-hole TO-247AC package and robust power dissipation are advantageous.

• 1000V maximum drain-source voltage enables high-voltage switching applications • 125W power dissipation allows sustained power handling under load • 3.1A continuous drain current supports moderate current delivery • 5Ω maximum on-resistance minimises conduction losses at low gate drive • 80nC typical gate charge facilitates predictable switching behaviour • ±150°C/-55°C temperature range sustains wide operating environments

• Suitable for high-voltage industrial inverter stages • Ideal for switched-mode power supplies requiring through-hole mounting • Used for motor drive protection circuits with high voltage margins • Can be used for university and workshop prototyping of power circuits • Used with gate drivers in high-voltage switching assemblies

Expect a typical gate charge of 80nC at the rated gate voltage, so select a driver capable of sourcing and sinking sufficient current to meet desired switching speeds and to control switching losses.

The device can dissipate up to 125W

It is specified for operation down to -55°C and up to +150°C, permitting use across a broad temperature range in industrial settings.

It is supplied in a through-hole TO-247AC package with three pins, suitable for bolted heatsink attachment and reliable soldered board connections.