- RS Stock No.:
- 180-7811
- Mfr. Part No.:
- SI2392ADS-T1-GE3
- Brand:
- Vishay
On back order for despatch 14/08/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Pack of 20)
$0.698
(exc. GST)
$0.768
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
20 - 740 | $0.698 | $13.96 |
760 - 1480 | $0.681 | $13.62 |
1500 + | $0.671 | $13.42 |
*price indicative
- RS Stock No.:
- 180-7811
- Mfr. Part No.:
- SI2392ADS-T1-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Boost converters
• DC/DC converters
• LED backlighting in LCD TVs
• Load switch
• Power management for mobile computing
• DC/DC converters
• LED backlighting in LCD TVs
• Load switch
• Power management for mobile computing
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.1 A |
Maximum Drain Source Voltage | 100 V |
Series | TrenchFET |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.189 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3V |
Number of Elements per Chip | 1 |
Related links
- N-Channel MOSFET, 3.1 A, 100 V, 3-Pin SOT-23 Vishay SI2392ADS-T1-GE3
- P-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-E3
- N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3
- N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay SI2338DS-T1-GE3
- N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3
- N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3
- N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304DDS-T1-GE3
- N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3