Vishay Type P-Channel MOSFET, 1.1 A, 50 V, 3-Pin HVMDIP
- RS Stock No.:
- 256-7282
- Mfr. Part No.:
- IRFD9010PBF
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 100 units)*
$132.30
(exc. GST)
$145.50
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 200 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 400 | $1.323 | $132.30 |
| 500 - 900 | $1.084 | $108.40 |
| 1000 - 2400 | $0.855 | $85.50 |
| 2500 + | $0.803 | $80.30 |
*price indicative
- RS Stock No.:
- 256-7282
- Mfr. Part No.:
- IRFD9010PBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | HVMDIP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type HVMDIP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel mosfet HVMDIPs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
For automatic insertion
Compact, end stackable
Fast switching
Low drive current
Easy paralleled
Excellent temperature stability