Infineon BSR Type N-Channel MOSFET, 3.7 A, 40 V Enhancement, 3-Pin SOT-223 BSR802NL6327HTSA1

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$4.05

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$4.45

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Per Pack*
5 - 5$0.81$4.05
10 - 95$0.73$3.65
100 - 245$0.656$3.28
250 - 495$0.592$2.96
500 +$0.534$2.67

*price indicative

Packaging Options:
RS Stock No.:
250-0540
Distrelec Article No.:
304-40-497
Mfr. Part No.:
BSR802NL6327HTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

BSR

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes this Optimos 2 Small-Signal-Transistor. It is a P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Logic level (4.5V rated)

Avalanche rated and 100% lead-free

Maximum power dissipation is 360 mW

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