onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1

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$12.96

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$14.26

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Per unit
1 - 1$12.96
2 - 4$12.32
5 - 9$11.69
10 - 14$11.10
15 +$10.53

*price indicative

Packaging Options:
RS Stock No.:
248-5816
Mfr. Part No.:
NTH4L060N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Typical Gate Charge Qg @ Vgs

74nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L


The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.

Ultra low gate charge 74 nC

Low capacitance 133 pF

100 percent avalanche tested

Temperature 175°C

RDS(on) 44 mohm

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