N-Channel MOSFET, 47 A, 650 V, 4-Pin TO-247-4L onsemi NTH4L060N065SC1

RS Stock No.:: 248-5816
Mfr. Part No.:: NTH4L060N065SC1
Brand:: onsemi

N-Channel MOSFET, 47 A, 650 V, 4-Pin TO-247-4L onsemi NTH4L060N065SC1

442 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$18.81

(exc. GST)

$20.69

(inc. GST)

Units	Per unit
1 - 1	$18.81
2 - 4	$17.87
5 - 9	$16.97
10 - 14	$16.13
15 +	$15.31

RS Stock No.:: 248-5816
Mfr. Part No.:: NTH4L060N065SC1
Brand:: onsemi

Technical data sheets

Datasheet - NTH4L060N065SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.

Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	47 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247-4L
Mounting Type	Through Hole
Pin Count	4