Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- RS Stock No.:
- 244-0943
- Mfr. Part No.:
- IPD65R225C7ATMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (2500 units, on reels of 2500)*
$3,972.50
(exc. GST)
$4,370.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | $1.589 | $3,972.50 |
| 5000 - 5000 | $1.579 | $3,947.50 |
| 7500 + | $1.569 | $3,922.50 |
*price indicative
- RS Stock No.:
- 244-0943
- Mfr. Part No.:
- IPD65R225C7ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD65R225C7ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding environments. It provides robust drain-to-source handling for medium-voltage applications and operates across a wide temperature range, making it suitable for industrial and automotive contexts where compact, high-power switching is required.
Features and Benefits:
• 40V maximum drain-to-source voltage supporting medium-voltage circuits
• 180A continuous drain current enabling high-current switching
• 1.2mΩ low Rds(on) minimising conduction losses
• 81W maximum power dissipation allowing sustained load handling
• 80nC typical gate charge delivering predictable switching energy
• 0.9V forward voltage reducing voltage drop under load
• 180A continuous drain current enabling high-current switching
• 1.2mΩ low Rds(on) minimising conduction losses
• 81W maximum power dissipation allowing sustained load handling
• 80nC typical gate charge delivering predictable switching energy
• 0.9V forward voltage reducing voltage drop under load
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current DC motor drive stages
• Used with battery management systems in electric vehicles
• Can be used for industrial power converters
• Suitable for Compact surface-mount power assemblies
• Ideal for high-current DC motor drive stages
• Used with battery management systems in electric vehicles
• Can be used for industrial power converters
• Suitable for Compact surface-mount power assemblies
What gate drive amplitude can be applied safely?
The gate may be driven up to 20V relative to source within specified limits.
What thermal range can the device tolerate during operation?
It functions across temperatures from -55°C to +150°C for extended use.
Which mounting style is provided for board assembly?
It is supplied in a TO-252 package intended for surface mounting.
Does it meet automotive qualification standards?
It complies with AEC-Q101 requirements for automotive component grading.
Are there environmental restrictions on its manufacture?
The device adheres to RoHS directives restricting hazardous substances.
Related links
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