N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH200N10WF7-2
- RS Stock No.:
- 234-8895
- Mfr. Part No.:
- STH200N10WF7-2
- Brand:
- STMicroelectronics
Available for back order.
Price (ex. GST) Each (On a Reel of 1000)
$7.157
(exc. GST)
$7.873
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | $7.157 | $7,157.00 |
| 2000 - 2000 | $6.799 | $6,799.00 |
| 3000 + | $6.459 | $6,459.00 |
*price indicative
- RS Stock No.:
- 234-8895
- Mfr. Part No.:
- STH200N10WF7-2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance
High current surge capability
Extremely low on-resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | H2PAK-2 |
| Series | STH200 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
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