SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 STMicroelectronics SCT20N120H
- RS Stock No.:
- 201-4416
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
Available for back order.
Price (ex. GST) Each
$25.78
(exc. GST)
$28.36
(inc. GST)
Units | Per unit |
|---|---|
| 1 + | $25.78 |
- RS Stock No.:
- 201-4416
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | SiC MOSFET |
| Package Type | H2PAK-2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.203 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 239V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
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