STMicroelectronics STH285N10F8-2AG N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK-2

N

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$5.56

(exc. GST)

$6.12

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9$5.56
10 - 24$5.40
25 - 99$5.28
100 - 499$4.51
500 +$4.24

*price indicative

RS Stock No.:
800-459
Mfr. Part No.:
STH285N10F8-2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH285N10F8-2AG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

4V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

177nC

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Standards/Approvals

ECOPACK

Length

10.4mm

Height

15.8mm

Width

4.7mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

AEC-Q101 qualified

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

Related links