STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 1000 units)*

$14,757.00

(exc. GST)

$16,233.00

(inc. GST)

Add to Basket
Select or type quantity
Orders below $60.00 (exc. GST) cost $12.95.
In Stock
  • 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 4000$14.757$14,757.00
5000 +$13.281$13,281.00

*price indicative

RS Stock No.:
233-3040
Mfr. Part No.:
STH12N120K5-2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK

Series

STB37N60

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44.2nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

150°C

Width

15.8 mm

Length

10.4mm

Height

4.8mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Related links