N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STMicroelectronics STH270N8F7-2

RS Stock No.:: 168-7106
Mfr. Part No.:: STH270N8F7-2
Brand:: STMicroelectronics

N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STMicroelectronics STH270N8F7-2

This image is representative of the product range

998 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 1000)

$4.871

(exc. GST)

$5.358

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$4.871	$4,871.00
5000 +	$4.711	$4,711.00

*price indicative

RS Stock No.:: 168-7106
Mfr. Part No.:: STH270N8F7-2
Brand:: STMicroelectronics

Technical data sheets

STH270N8F7-2, STH270N8F7-6, STP270N8F7, N-Channel 80V, 0.0017 Ohm typ., 180A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages Data Sheet
ESD Control Selection Guide V1

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	80 V
Series	STripFET H7
Package Type	H2PAK-2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	21 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	315 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	15.8mm
Length	10.4mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	193 nC @ 10 V
Height	4.8mm
Minimum Operating Temperature	-55 °C