Planned Maintenance – Friday 21st to Sunday 23rd June 2024

To improve your experience with RS, we are making some system upgrades. This means from 5am AEST on Friday 21^st June to 7am AEST on Monday 24th June we will be unable to process orders. The website will be available again on Monday 24^th June. We apologise for any inconvenience caused and we thank you for your patience during this period.

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

RS Stock No.:: 168-8819
Mfr. Part No.:: STH150N10F7-2
Brand:: STMicroelectronics

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

This image is representative of the product range

Price (ex. GST) Each (On a Reel of 1000)

$3.557

(exc. GST)

$3.913

(inc. GST)

On back order for despatch 08/07/2025, delivery within 10 working days from despatch date.

Units	Per unit	Per Reel*
1000 - 4000	$3.557	$3,557.00
5000 +	$3.44	$3,440.00

*price indicative

RS Stock No.:: 168-8819
Mfr. Part No.:: STH150N10F7-2
Brand:: STMicroelectronics

STH150N10F7-2, N-channel 100V, 3.4mOhm typ., 110A, STripFET F7 Power MOSFET in a H2PAK-2 Package
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	100 V
Series	DeepGate, STripFET
Package Type	H2PAK-2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	117 nC @ 10 V
Number of Elements per Chip	1
Length	10.4mm
Transistor Material	Si
Width	10.57mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	4.8mm

Planned Maintenance – Friday 21st to Sunday 23rd June 2024

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

N-Channel STripFET™ DeepGate™, STMicroelectronics

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