STMicroelectronics N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7
- RS Stock No.:
- 233-0471
- Mfr. Part No.:
- SCTH60N120G2-7
- Brand:
- STMicroelectronics
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 233-0471
- Mfr. Part No.:
- SCTH60N120G2-7
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 60 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Maximum Drain Source Resistance (Rds) | 0.052 Ω | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 60 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Maximum Drain Source Resistance (Rds) 0.052 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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