SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK-7 STMicroelectronics SCTH50N120-7
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Available for back order.
Added
Price (ex. GST) Each
$129.36
(exc. GST)
$142.30
(inc. GST)
| Units | Per unit |
| 1 - 249 | $129.36 |
| 250 - 499 | $126.12 |
| 500 + | $124.17 |
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance
temperature
Very fast and robust intrinsic body diode
Low capacitance
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | SCTH50N120-7 |
| Package Type | H2PAK-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 0.065 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.1V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
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