STMicroelectronics SCTH50N120-7 N-Channel SiC Power Module, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCTH50N120-7
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Series | SCTH50N120-7 | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current (Id) | 55 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Maximum Drain Source Resistance (Rds) | 0.065 Ω | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Series SCTH50N120-7 | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current (Id) 55 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Maximum Drain Source Resistance (Rds) 0.065 Ω | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7
- STMicroelectronics Type N-Channel SiC Power Module 1200 V Enhancement, 3-Pin Hip-247 SCT30N120H
- STMicroelectronics Type N-Channel SiC Power Module 1200 V Enhancement, 3-Pin Hip-247 SCT10N120H
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- STMicroelectronics STPOWER Gen3 SiC MOSFET Type N-Channel 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- STMicroelectronics SCT025H120G3AG Type N 55 A 7-Pin H2PAK-7 SCT025H120G3AG
- STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK