Silicon N-Channel MOSFET, 60 A, 1200 V, 7-Pin H2PAK-7 STMicroelectronics SCTH60N120G2-7
- RS Stock No.:
- 233-0470
- Mfr. Part No.:
- SCTH60N120G2-7
- Brand:
- STMicroelectronics
On back order for despatch 28/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 1000)
$38.686
(exc. GST)
$42.555
(inc. GST)
| Units | Per unit | Per Reel* |
| 1000 - 4000 | $38.686 | $38,686.00 |
| 5000 + | $34.817 | $34,817.00 |
| *price indicative | ||
- RS Stock No.:
- 233-0470
- Mfr. Part No.:
- SCTH60N120G2-7
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | H2PAK-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 0.052 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |
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