STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- RS Stock No.:
- 214-951
- Mfr. Part No.:
- SCT025H120G3AG
- Brand:
- STMicroelectronics
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- RS Stock No.:
- 214-951
- Mfr. Part No.:
- SCT025H120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Series | SCT025H120G3AG | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 55 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Automotive Standard | AEC-Q101 | |
| Forward Voltage (Vf) | 2.7 V | |
| Height | 4.8 mm | |
| Length | 15.25 mm | |
| Maximum Drain Source Resistance (Rds) | 27 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 22 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 375 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 73 nC | |
| Width | 10.4 mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Series SCT025H120G3AG | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 55 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Automotive Standard AEC-Q101 | ||
Forward Voltage (Vf) 2.7 V | ||
Height 4.8 mm | ||
Length 15.25 mm | ||
Maximum Drain Source Resistance (Rds) 27 mΩ | ||
Maximum Gate Source Voltage (Vgs) 22 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 375 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals AEC-Q101, RoHS | ||
Typical Gate Charge (Qg) @ Vgs 73 nC | ||
Width 10.4 mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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