onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263 NTB011N15MC
- RS Stock No.:
- 230-9079
- Mfr. Part No.:
- NTB011N15MC
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$13.11
(exc. GST)
$14.42
(inc. GST)
Add 10 units to get free delivery
In Stock
- 7,164 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $6.555 | $13.11 |
| 10 - 98 | $6.36 | $12.72 |
| 100 - 248 | $6.175 | $12.35 |
| 250 - 498 | $5.995 | $11.99 |
| 500 + | $5.82 | $11.64 |
*price indicative
- RS Stock No.:
- 230-9079
- Mfr. Part No.:
- NTB011N15MC
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTB01 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 136.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTB01 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 136.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Related links
- onsemi NTB01 Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-263
- onsemi NTB7D Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-263
- onsemi NTB7D Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-263 NTB7D3N15MC
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223 FDT86244
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 FDB2572
- onsemi NTB5D0N Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263