MOSFET, 60 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCTWA60N120G2-4
- RS Stock No.:
- 230-0094
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
9 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$54.84
(exc. GST)
$60.32
(inc. GST)
| Units | Per unit |
| 1 - 9 | $54.84 |
| 10 - 99 | $53.21 |
| 100 - 249 | $51.63 |
| 250 - 499 | $50.08 |
| 500 + | $48.56 |
- RS Stock No.:
- 230-0094
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | HiP247-4 |
| Series | SCTW |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 5.2e+007 Ω |
| Maximum Gate Threshold Voltage | 5V |