STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247

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Subtotal (1 tube of 30 units)*

$1,550.13

(exc. GST)

$1,705.14

(inc. GST)

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Units
Per unit
Per Tube*
30 +$51.671$1,550.13

*price indicative

RS Stock No.:
230-0093
Mfr. Part No.:
SCTWA60N120G2-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

SCTW

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

388W

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

175°C

Width

5.1 mm

Length

15.9mm

Standards/Approvals

No

Height

21.1mm

Automotive Standard

No

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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