Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1

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Subtotal (1 pack of 15 units)*

$22.485

(exc. GST)

$24.735

(inc. GST)

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  • 9,900 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
15 - 15$1.499$22.49
30 - 75$1.455$21.83
90 - 225$1.411$21.17
240 - 465$1.369$20.54
480 +$1.327$19.91

*price indicative

Packaging Options:
RS Stock No.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.5mm

Standards/Approvals

No

Width

6.22 mm

Height

2.3mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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