Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

$14.70

(exc. GST)

$16.20

(inc. GST)

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  • 6,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40$1.47$14.70
50 - 90$1.426$14.26
100 - 240$1.383$13.83
250 - 990$1.341$13.41
1000 +$1.302$13.02

*price indicative

Packaging Options:
RS Stock No.:
228-2825
Mfr. Part No.:
SI7116BDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

31.4nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.75mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

Very low Qg and Qoss reduce power loss and

improve efficiency

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

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