Vishay TrenchFET N-Channel MOSFET, 18.7 A, 100 V Enhancement, 8-Pin SO-8 Si4090BDY-T1-GE3
- RS Stock No.:
- 228-2821
- Mfr. Part No.:
- Si4090BDY-T1-GE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
$16.91
(exc. GST)
$18.60
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | $3.382 | $16.91 |
| 50 - 95 | $3.28 | $16.40 |
| 100 - 245 | $3.184 | $15.92 |
| 250 - 995 | $3.09 | $15.45 |
| 1000 + | $2.996 | $14.98 |
*price indicative
- RS Stock No.:
- 228-2821
- Mfr. Part No.:
- Si4090BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 7.4W | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 7.4W | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
100 % Rg and UIS tested
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