Vishay N-Channel 60 V Type N-Channel MOSFET, 75 A, 60 V Single, 4-Pin PowerPAK (8x8L) SQJ164ELP-T1_GE3
- RS Stock No.:
- 225-9950
- Mfr. Part No.:
- SQJ164ELP-T1_GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$15.58
(exc. GST)
$17.14
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 27 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.558 | $15.58 |
| 50 - 90 | $1.529 | $15.29 |
| 100 - 240 | $1.501 | $15.01 |
| 250 - 990 | $1.473 | $14.73 |
| 1000 + | $1.447 | $14.47 |
*price indicative
- RS Stock No.:
- 225-9950
- Mfr. Part No.:
- SQJ164ELP-T1_GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | N-Channel 60 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Single | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 90mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series N-Channel 60 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Single | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 6.15mm | ||
Width 4.9 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 90mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
Related links
- Vishay N-Channel 60 V N-Channel MOSFET 60 V, 4-Pin PowerPAK 8 x 8L SQJ164ELP-T1_GE3
- Vishay N-Channel 60 V N-Channel MOSFET 60 V, 4-Pin PowerPAK 8 x 8L SQJA16EP-T1_GE3
- Vishay N-Channel 60 V N-Channel MOSFET 60 V, 4-Pin PowerPAK 8 x 8L SQJQ160E-T1_GE3
- Vishay N-Channel 60 V N-Channel MOSFET 60 V, 4-Pin PowerPAK 8 x 8L SQJ174EP-T1_GE3
- Vishay N-Channel 80 V N-Channel MOSFET 80 V, 4-Pin PowerPAK 8 x 8L SQJ180EP-T1_GE3
- Vishay N-Channel 40 V N-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJ138ELP-T1_GE3
- Vishay N-Channel 30 V N-Channel MOSFET 30 V, 4-Pin PowerPAK 8 x 8L SQJ128ELP-T1_GE3
- Vishay N-Channel MOSFET 60 V, 4-Pin PowerPAK 8 x 8L SIJH600E-T1-GE3