N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SiS128LDN-T1-GE3

RS Stock No.:: 188-4888
Mfr. Part No.:: SiS128LDN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SiS128LDN-T1-GE3

On back order for despatch 12/10/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.575

(exc. GST)

$0.633

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.575	$1,725.00
6000 - 9000	$0.561	$1,683.00
12000 +	$0.552	$1,656.00

*price indicative

RS Stock No.:: 188-4888
Mfr. Part No.:: SiS128LDN-T1-GE3
Brand:: Vishay

Datasheet SiS128LDN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33.7 A
Maximum Drain Source Voltage	80 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	39 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	3.15mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	3.15mm
Height	1.07mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SiS128LDN-T1-GE3

Related links