Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR

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Subtotal (1 pack of 10 units)*

$37.83

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$41.61

(inc. GST)

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Per Pack*
10 - 10$3.783$37.83
20 - 90$3.714$37.14
100 - 240$3.648$36.48
250 - 490$3.582$35.82
500 +$3.518$35.18

*price indicative

Packaging Options:
RS Stock No.:
223-8453
Mfr. Part No.:
AUIRF7341QTR
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.1A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

3 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5mm

Width

4 mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology

Dynamic dV/dT rating

Logic level gate drive

175°C operating temperature

Fast switching

Lead free

RoHS compliant

Automotive qualified

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