Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V, 8-Pin SOIC Infineon IRF7907TRPBF

RS Stock No.:: 130-0964
Mfr. Part No.:: IRF7907TRPBF
Brand:: Infineon

Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V, 8-Pin SOIC Infineon IRF7907TRPBF

This image is representative of the product range

4780 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 10)

$1.436

(exc. GST)

$1.58

(inc. GST)

Units	Per unit	Per Pack*
10 - 990	$1.436	$14.36
1000 - 1990	$1.41	$14.10
2000 +	$1.379	$13.79

*price indicative

RS Stock No.:: 130-0964
Mfr. Part No.:: IRF7907TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.1 A, 11 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	13.7 mΩ, 20.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2 W
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	14 nC @ 4.5 V, 6.7 nC @ 4.5 V
Number of Elements per Chip	2
Length	5mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C
Height	1.5mm